Photoelectroscopic Study of Mn Barrier Layer on SiO2for Si Wafer Bonding Process
| Autor: | Kengo Uchida, Kenro Nakamura, Toyohiro Chikyow, Kazuyuki Higashi, Kazumichi Tsumura, Takahiro Nagata, Jin Kawakita |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Wafer bonding 02 engineering and technology Direct bonding 021001 nanoscience & nanotechnology 01 natural sciences Redox Barrier layer Chemical bond Chemical engineering X-ray photoelectron spectroscopy 0103 physical sciences Wafer 0210 nano-technology Deposition (law) |
| Zdroj: | 3DIC |
| Popis: | The chemical bonding state of Mn film on SiO 2 , which is expected to be applied as a bonding material for Si wafer, was investigated by x-ray photoelectron spectroscopy (XPS). The as deposited Mn film had unintentionally oxidized surface and interface layer, caused by an air exposure and a redox reaction with SiO x at the SiO 2 surface, respectively. Post deposition anneal (PDA) enhanced the redox reaction between MnO x and SiO 2 . The N 2 plasma treatment eliminates the redox reaction, and enhances the Si-Mn-O bonding formation, which should improve the tensile strength of wafer bonding. |
| Databáze: | OpenAIRE |
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