Autor: |
Baoping Zhang, Li-E Cai, Qiming Wang, Du-Xiang Wang, Feng Lin, Shui-Qing Li, Jinzhong Yu, Ke-Chuang Lin, Jiang-Yong Zhang, Jing-Zhi Shang |
Rok vydání: |
2009 |
Předmět: |
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Zdroj: |
Journal of Lightwave Technology. 27:55-59 |
ISSN: |
0733-8724 |
DOI: |
10.1109/jlt.2008.928542 |
Popis: |
Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplified procedure: direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 nm under optical pumping at room temperature with a threshold pumping energy density of about 71.5 mJ/cm2. The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-based VCSEL can be realized by optimizing the laser lift-off technique for substrate removal. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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