452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon
| Autor: | Pinal Patel, Ya Shen, Jeffrey B. Shealy, Ramakrishna Vetury |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon business.industry Bandwidth (signal processing) Doping Wide-bandgap semiconductor chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology Nitride Resonator chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Insertion loss Power handling business |
| Zdroj: | 2019 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm19573.2019.8993455 |
| Popis: | 5.66 GHz bulk acoustic wave filters, utilizing doped aluminum nitride (AlN), are reported. The filters exhibit high -3 dB bandwidth of 452 MHz (8% fractional bandwidth), a minimum insertion loss of 1.79 dB, rejection greater than 50 dB and power handling performance (near the upper band edge) up to 32.5 dBm. Resonators show k2eff of 10.24%, Qmax of 1479, and FOM of 151. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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