A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance

Autor:	Hye-Jin Cho, Donggun Park, Sung-min Kim, Dong-Won Kim, Ming Li, Sung-young Lee, Kyoung-hwan Yeo, Sung Hwan Kim, Kinam Kim, Min-Sang Kim, Chang Woo Oh, Jeong-Dong Choi, Eun-Jung Yoon
Rok vydání:	2004
Předmět:	Materials science Silicon business.industry Copper interconnect chemistry.chemical_element Epitaxy Si substrate chemistry MOSFET Process integration Electronic engineering Optoelectronics business Scaling Communication channel
Zdroj:	Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
DOI:	10.1109/vlsit.2004.1345478
Popis:	We demonstrate highly manufacturable sub-50 nm MBCFET with the I/sub on/ of 4.26 mA/ /spl mu/m at V/sub DD/ = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted from the vertically stacked channels and enhanced mobility. It has been fabricated on bulk Si substrate by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and damascene gate process. It has structural and electrical merits in scaling and process integration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9e4facd2b41de9bf639144015f25403 https://doi.org/10.1109/vlsit.2004.1345478 Zobrazit plný text záznamu