Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system
| Autor: | Vyacheslav F. Markov, S. A. Bakhteev, L. N. Maskaeva, E. A. Fedorova, R. A. Yusupov |
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| Rok vydání: | 2016 |
| Předmět: |
Chalcogenide
Potentiometric titration Inorganic chemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Instability 0104 chemical sciences Hydrolysis chemistry.chemical_compound chemistry Deposition (phase transition) Physical and Theoretical Chemistry Gallium Thin film 0210 nano-technology Stoichiometry |
| Zdroj: | Russian Journal of Physical Chemistry A. 90:1274-1279 |
| ISSN: | 1531-863X 0036-0244 |
| DOI: | 10.1134/s0036024416060078 |
| Popis: | Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films. |
| Databáze: | OpenAIRE |
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