Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide

Autor:	Po-Chun Yang, Ann-Kuo Chu, Shih-Ching Chen, Hsueh-Chih Tseng, S. M. Sze, Yu-Ting Chen, Jyun-Bao Yang, Jheng-Jie Huang, Ting-Chang Chang, Ming-Jinn Tsai
Rok vydání:	2012
Předmět:	Materials science Argon Bistability Analytical chemistry chemistry.chemical_element Oxygen Electronic Optical and Magnetic Materials chemistry Electrode Electronic engineering Limiting oxygen concentration Electrical and Electronic Engineering Gallium Platinum Tin
Zdroj:	IEEE Electron Device Letters. 33:1387-1389
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2206365
Popis:	In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9d5a94b801d8b4a8b13e3c2cc83dc4f https://doi.org/10.1109/led.2012.2206365 Zobrazit plný text záznamu