Current Transport Mechanism in p-InSb–n-CdTe Heterojunction

Autor:	S. G. Petrosyan, L. M. Matevosyan, S. R. Nersesyan, K. E. Avjyan
Rok vydání:	2019
Předmět:	Materials science Condensed matter physics External bias General Physics and Astronomy Heterojunction Charge injection Cadmium telluride photovoltaics Linear section Pulsed laser deposition Voltage
Zdroj:	Journal of Contemporary Physics (Armenian Academy of Sciences). 54:146-152
ISSN:	1934-9378 1068-3372
Popis:	Based on the analysis of the forward current-voltage characteristics of the p-InSb–n-CdTe heterojunction fabricated by a method of pulsed laser deposition, the existence of two charge injection mechanisms was experimentally confirmed. At relatively small external bias voltages (0.03 V < U < 0.15 V), the current is in a satisfactory agreement with the expression I ~ exp(qU/ηkT) with the ideality factor η = 1. Above 0.18 V, the current-voltage characteristic obeys the law I ~ U3/2 followed by an attainment to the linear section (the cut-off voltage of current is 0.47 V). A theoretical model of current transport is given taking into account the peculiarities of the heterojunction band discontinuity, leading to the origination of inversion layer near the interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9c070d271668496c39b3bf742c2da38 https://doi.org/10.3103/s1068337219020051 Zobrazit plný text záznamu Full text from SpringerLink