Highly Reliable and Scalable Tungsten Polymetal Gate Process for Memory Devices Using Low-Temperature Plasma Selective Gate Reoxidation

Autor:	Se-Aug Jang, Kwan-Yong Lim, Heung-Jae Cho, Hong-Seon Yang, Sungwook Park, Jae-Geun Oh, Min Gyu Sung, Yun-Seok Chun, Seung Ryong Lee, Jinwoong Kim, Pil-Soo Lee, Hyun-Chul Sohn, Noh-Jung Kwak, Kwang-Ok Kim, Yong Soo Kim
Rok vydání:	2006
Předmět:	Resistive touchscreen Materials science Diffusion barrier business.industry Polymetal Transistor Electrical engineering chemistry.chemical_element Time-dependent gate oxide breakdown Tungsten law.invention chemistry Gate oxide law Optoelectronics business Metal gate
Zdroj:	2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
DOI:	10.1109/vlsit.2006.1705223
Popis:	We applied a very low-temperature plasma-type selective gate reoxidation process to W/poly-Si gate for suppression of abnormal oxidation of a low contact resistive WSix/WN diffusion barrier. The device with the plasma selective gate reoxidation showed superior gate oxide reliability and improved stress immunity of transistor compared to the thermally selective gate reoxidized devices
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9be192e5020a0619224a680cf1aaa67 https://doi.org/10.1109/vlsit.2006.1705223 Zobrazit plný text záznamu