In-line detection of radial non-uniformity of V/sub T/-adjust implants in 200 mm wafers using Hg-probe C-V carrier depth profiling

Autor:	S.R. Weinzierl, R.J. Hillard, G.A. Gruber
Rok vydání:	2002
Předmět:	Atomic diffusion Materials science Ion implantation Annealing (metallurgy) MOSFET Analytical chemistry Furnace anneal Wafer Capacitance Threshold voltage
Zdroj:	Proceedings of 11th International Conference on Ion Implantation Technology.
DOI:	10.1109/iit.1996.586192
Popis:	Variations in V/sub T/-adjust implant dose from the center to edge of 200 mm wafers are investigated for both furnace and rapid thermal anneals using highly accurate in-line Hg-probe pulsed C-V measurements. Solid-state diffusion theory is used to verify the observed differences.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9b8e41cf0751be366afeceed89f9085 https://doi.org/10.1109/iit.1996.586192 Zobrazit plný text záznamu