Selective-area epitaxy of GaAs by Molecular-Beam Epitaxy (MBE) and metalorganic MBE with excimer laser irradiation
| Autor: | Charles W. Tu, Vincent M. Donnelly, J. C. Beggy, J. A. McCaulley, V. R. McCrary |
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| Rok vydání: | 1989 |
| Předmět: |
Materials science
Excimer laser business.industry medicine.medical_treatment Substrate (electronics) Excimer laser irradiation Condensed Matter Physics Laser Epitaxy law.invention Inorganic Chemistry Selective area epitaxy law Materials Chemistry medicine Optoelectronics Irradiation business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 95:140-141 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(89)90367-9 |
| Popis: | Using an ArF excimer laser (193 nm, 15 ns pulse, 20 Hz, 50–200 mj cm -2 pulse -1 ), we demonstrated laser-inhibited molecular-beam epitaxy (MBE) of GaAs on the surface of (Ca,Sr)F 2 lattice-matched to a GaAs substrate. We also demonstrated laser-enhanced metalorganic MBE (MOMBE) of GaAs on GaAs. These effects are due to the transient temperature rise during laser irradiation. |
| Databáze: | OpenAIRE |
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