Upgraded Metallurgical Grade Silicon for Solar Cell Fabrication

Autor:	Díaz-Herrera, B., Montesdeoca-Santana, A., Jiménez-Rodríguez, E., González-Diaz, B., Hernández-Rodríguez, C., Guerrero-Lemus, R., Rinio, M., Borchert, D.
Jazyk:	angličtina
Rok vydání:	2009
Předmět:	Mono- and Multicrystalline Silicon Materials and Cells Wafer-based Silicon Solar Cells and Materials Technology
DOI:	10.4229/24theupvsec2009-2cv.5.64
Popis:	24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 1934-1936 This paper discusses the gettering process during emitter diffusion in upgraded metallurgical grade (UMG) silicon and the effect of a subsequent low temperature annealing (LTA) which is proven to be a suitable method to increase the cell lifetime and efficiency according to recent studies from other authors. Neighboring wafers of the same ingot were selected to be processed and characterized by means of μW-PCD lifetime measurements. An increase in minority carrier lifetime by a factor of 3.8 is obtained after the phosphorus gettering, although no improvement due to the LTA process in these wafers was observed.
Databáze:	OpenAIRE
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