Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs
| Autor: | Eddy Simoen, Chao Zhao, Nadine Collaert, Anabela Veloso, Aaron Thean, Cor Claeys, Moonju Cho, Jun Luo, Tianchun Ye, Wen Fang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance Gate dielectric Electrical engineering Nanowire Silicon on insulator 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Noise (electronics) Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Gate oxide 0103 physical sciences Optoelectronics Work function Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Electron Device Letters. 37:363-365 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The impact of the effective work function (EWF) gate metal on the low-frequency noise behavior of n-type gate-all-around nanowire (NW) FETs has been investigated. A clear reduction of the noise power spectral density has been observed for n-type TiAl-based EWF-metal gate NWFETs, indicating a reduction of the oxide trap density in the high- $\kappa $ dielectric. The difference in the observed trap density profiles for both types of devices can be explained by a beneficial impact of the presence of Al on the trap density in the underlying HfO2. The lower oxide trap density also explains the improvement of the maximum transconductance by $\sim 20$ % in the TiAl-based devices. |
| Databáze: | OpenAIRE |
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