The Method of Solid State Impurity Diffusion and Doping In 4H-SiC
| Autor: | Suwan P. Mendis, Chin-Che Tin, I. G. Atabaev, B. G. Atabaev |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Fabrication
Materials science Silicon Dopant Condensed matter physics Doping chemistry.chemical_element Thermal diffusivity Condensed Matter::Materials Science Crystallography chemistry.chemical_compound chemistry Impurity Condensed Matter::Superconductivity Physics::Atomic and Molecular Clusters Silicon carbide Condensed Matter::Strongly Correlated Electrons Diffusion (business) |
| Zdroj: | International Journal of Fundamental Physical Sciences. 3:75-78 |
| ISSN: | 2231-8186 |
| DOI: | 10.14331/ijfps.2013.330059 |
| Popis: | Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity doping by thermal diffusion in SiC is possible if there is a parallel mechanism, such as oxidation or silicidation that creates silicon or carbon vacancies, which then allows dopant impurities to diffuse into these vacancies. This paper describes the experimental procedures by which oxidation and silicidation can be used to generate vacancies and enhance impurity doping at temperatures below 1400 oC |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|