Fabrication and Photosensitivity of CdS/Silicon Nanoscrew Photoresistor
| Autor: | Jing Liu, Yuting Wang, Futing Yi, Yue Zhou, Tianchong Zhang, Bo Wang |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon business.industry Photoresistor chemistry.chemical_element 02 engineering and technology General Chemistry Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Cadmium sulfide 0104 chemical sciences law.invention chemistry.chemical_compound Optics Photosensitivity chemistry law Etching (microfabrication) Optoelectronics Dry etching 0210 nano-technology business Lithography |
| Zdroj: | ChemistrySelect. 2:8577-8582 |
| ISSN: | 2365-6549 |
| Popis: | Silicon nanoscrews with aspect ratio of 3, 6 and 9 corresponding to 4, 8 and 12 etching cycles are fabricated by CsCl self-assembly lithography and inductively coupled plasma (ICP) dry etching with “Bosch Process”, which can reduce the reflection to below to 10% for wavelength from 400 to 1000 nm. A layer of Cadmium sulfide (CdS) film covers onto the silicon nanoscrews surface to photoresistor. The XRD pattern shows the CdS packed both on the nanoscrew and planar surface are well-crystallized. The nanoscrew substrate with the large surface ratio can increase the light absorption and quantity of sensitive material, which can improve the photosensitivity of the CdS photoresistor compared to the planar one obviously. However, the aspect ratio of nanoscrew is not the larger the better for that the high aspect ratio also increases the difficulty of CdS package. The photosensitivity response test results show that the nanoscrew photoresistor with 6 aspect ratio has the best performance under different illumination. With 10000 μW/cm2, the best photosensitivity response achieves to 141 for nanoscrew sample. |
| Databáze: | OpenAIRE |
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