| Autor: |
Thomas R. Schimert, Richard D. Starr, M. Kestigian, Pradip Mitra, F. C. Case, Marion B. Reine, Y. L. Tyan, M. H. Weiler |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.179649 |
| Popis: |
Recent developments in MOCVD growth of Hg1-xCdxTe photodiodes using the interdiffused multilayer process are reported. Iodine doping of HgCdTe is described using ethyl iodide. Using ethyl iodide, the iodine doping level can be controlled in the range of 7 X 1014 - 2 X 1018 cm-3 without any memory effect. Activation of the iodine as a singly ionized donor is near 100% at concentrations = 1 X 105 cm2/V-s, auger limited lifetimes of approximately 1 microsecond(s) for concentrations of (1-3)X1015 cm-3, and x-values approximately 0.22. LWIR p-on-n heterojunctions have been grown in situ using iodine doping for the n-type absorber layer and arsenic doping for the p- type cap layer. Detailed characterization data for the photodiodes are reported.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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