Formation of an Array of Memristor Structures Using a Self-Assembly Matrix of Porous Anodic Aluminum Oxide
| Autor: | Alexander V. Solnyshkin, M. V. Kislitsin, A. A. Golishnikov, V. I. Shevyakov, Alexey Belov, A. A. Perevalov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Porous anodic aluminum oxide General Engineering 02 engineering and technology Memristor Electrolyte 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Matrix (mathematics) law 0103 physical sciences General Materials Science Self-assembly Composite material 0210 nano-technology Silicon oxide Porosity Layer (electronics) |
| Zdroj: | Nanotechnologies in Russia. 13:34-37 |
| ISSN: | 1995-0799 1995-0780 |
| DOI: | 10.1134/s1995078018010032 |
| Popis: | In this paper we demonstrate a technological route for the formation of an array of memristor structures using a self-assembly matrix of porous anodic aluminum oxide. We propose using a porous alumina matrix as a solid mask to develop pores in the dense silicon oxide layer below the mask, in which a material characterized by the possibility of resistive switching is formed. The merit of this mask should include reproducibility and the high-precision control of geometric parameters of the pores. The current-voltage characteristics of a memristor structure based on solid electrolyte Cu2S are determined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink