Novel temperature calibration for epitaxial growth characterization
| Autor: | Wang Linzi, Liu Jianpeng, Yan Dong, Shing Man Lee |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science business.industry General Chemical Engineering 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences law.invention Semiconductor law 0103 physical sciences Calibration Process control Optoelectronics Deposition (phase transition) 0210 nano-technology business Instrumentation General Environmental Science Pyrometer Light-emitting diode |
| Zdroj: | Instrumentation Science & Technology. 44:127-138 |
| ISSN: | 1525-6030 1073-9149 |
| DOI: | 10.1080/10739149.2015.1081934 |
| Popis: | A multi-probe in situ temperature monitoring system with a closed-loop process control has been developed using the technique of emissivity-compensated pyrometry for semiconductor epitaxial growth via metal-organic chemical vapor deposition. A stand-alone temperature calibration unit was designed to correct for reactor-to-reactor temperature variations. After calibration, a probe-to-probe temperature mismatch of less than ±0.13°C was obtained. Moreover, a temperature offset induced by the inevitable viewport deposition over time was demonstrated. A 4.28°C temperature bias was successfully double-calibrated by introducing a compensation factor into the radiation equations, which was then validated during twelve processing runs of light emitting diode epitaxial growth. |
| Databáze: | OpenAIRE |
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