New complementary PVD-Ta/CVD-WN stacked barrier structure for copper metallization

Autor:	Masao Ishihara, Hiizu Ohtorii, Zenya Yasuda, Takeshi Nogami, Shuzo Sato, Yuji Segawa, Kaori Tai, Y. Ohoka, Shingo Takahashi, Hiroshi Horikoshi, Naoki Komai
Rok vydání:	2003
Předmět:	Materials science Diffusion barrier Annealing (metallurgy) business.industry Metallurgy Tantalum chemistry.chemical_element Chemical vapor deposition Sputter deposition Corrosion Galvanic corrosion chemistry Optoelectronics Surface layer business
Zdroj:	Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
Popis:	A PVD-Ta/CVD-WN stacked barrier structure has been newly developed. Its PVD-Ta layer and CVD-WN layer work complementarily. Its conformal CVD-WN layer provides an excellent barrier performance and helps the overlying Cu seed suitable for Cu filling. Its PVD-Ta surface layer which contacts Cu directly provides an agglomeration-resistive interface and suppresses migration-up of Cu in features in thermal processes. Its PVD-Ta layer also solves the galvanic corrosion which had been an issue in CMP of the directly contacting Cu/WN system. Sharp distribution in line resistance has been successfully obtained for Cu interconnects with the newly developed complementary PVD-Ta/CVD-WN barrier.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9812236813cf8c3a506c61eb46dff3e https://doi.org/10.1109/iitc.2002.1014931 Zobrazit plný text záznamu