Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane Sapphire

Autor:	Dongjin Byun, Samseok Jang, So Young Yim, Sang-Il Kim, Do-Han Lee, Jaesang Lee, Jun Hyuck Kwon, Ji Hun Park
Rok vydání:	2012
Předmět:	Materials science Plane (geometry) Carbonization business.industry General Engineering General Physics and Astronomy Chemical vapor deposition Photoresist Epitaxy Sapphire Optoelectronics Metalorganic vapour phase epitaxy business Lithography
Zdroj:	Japanese Journal of Applied Physics. 51:115501
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.51.115501
Popis:	Epitaxial lateral overgrowth (ELO) a-plane GaN samples were successfully grown on masked sapphire (11̄02) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 µm and a period of 12 µm. The stripe-patterned PR was annealed at 1100 °C in a H2 atmosphere. The stripes were aligned parallel to the GaN direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the r-plane sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask on r-plane sapphire.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b97e95de2ef1361892c319df8768bafd https://doi.org/10.1143/jjap.51.115501 Zobrazit plný text záznamu