| Autor: |
Ramin Yousefi, Burhanuddin Kamaluddin, Mahmood Ghoranneviss, Fatemeh Hajakbari, Swee-Ping Chia, Kurunathan Ratnavelu, Muhamad Rasat Muhamad |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings. |
| DOI: |
10.1063/1.3192272 |
| Popis: |
In this paper, we report ZnO nanowires grown on AlN thin film deposited on glass as substrate by physical vapour deposition. The temperature of substrates was kept between 600° C and 500° C during the growth. The typical average diameters of the obtained nanowires on substrate at 600° C and 500° C was about 57 nm and 22 nm, respectively with several micrometers in lengths. X‐ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into ZnO nanowires for sample at high temperature zone. In the photoluminescence spectra two emission bands appeared, one related to ultraviolet emission with a strong peak at 380–382 nm, and another related to deep level emission with a weak peak at 510 nm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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