Observation of N- and S-shaped negative differential resistance behavior in AlGaAs/GaAs resonant tunneling structure
| Autor: | Houng Chi Wei, Mau-Phon Houng, Yeong-Her Wang |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
business.industry
Chemistry Heterojunction bipolar transistor Transistor Electrical engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Band offset Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Electronic band structure Polarity (mutual inductance) Quantum tunnelling Quantum well Common emitter |
| Zdroj: | Solid-State Electronics. 34:413-418 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(91)90172-u |
| Popis: | A MBE-grown two-terminal GaAs device with AlGaAs/GaAs quantum wells embedded in the base of a heterojunction bipolar transistor structure exhibiting both S -shaped and N -shaped negative differential resistance (NDR) characteristics is demonstrated. Due to the asymmetric structure, both S -and N -shaped NDR behaviors can be observed in the same device depending on the polarity applied. The S -shaped NDR behavior is explained by the enhancement of an avalanche process while the N -shaped NDR characteristics is attributed to a resonant tunneling process. The effects of band offset of AlGaAs/GaAs in the emitter/base and/or base/collector junction are found to have profound influence on the device characteristics and will be discussed. |
| Databáze: | OpenAIRE |
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