Characteristics of bottom-gate low temperature nanocrystalline silicon thin film transistor fabricated by hydrogen annealing of gate dielectric layer
| Autor: | Youn-Jin Lee, Kyoung Min Lee, Wan-Shick Hong |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Annealing (metallurgy) Gate dielectric Metals and Alloys Nanocrystalline silicon chemistry.chemical_element Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicon nitride Gate oxide Thin-film transistor Materials Chemistry Optoelectronics Thin film business |
| Zdroj: | Thin Solid Films. 518:6311-6314 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.03.057 |
| Popis: | Thin film transistors having nanocrystalline silicon as an active layer were fabricated by catalytic-CVD at a low process temperature (≤ 200 °C). The tri-layer of the bottom-gate TFT was deposited continuously inside the Cat-CVD reactor. In order to improve the quality of the gate dielectric layer an in-situ hydrogen annealing step was introduced in between the silicon nitride and the nanocrystalline silicon deposition steps. The in-situ hydrogen annealing was effective in reducing the hysteresis in the C–V characteristics and in enhancing the breakdown voltage by decreasing the defects inside the SiN x film. |
| Databáze: | OpenAIRE |
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