Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Autor:	Dominique Débarre, Jean-Luc Perrossier, Frédéric Fossard, J. Boulmer, Thierry Kociniewski
Rok vydání:	2011
Předmět:	Diffraction Materials science Silicon Laser diode Analytical chemistry chemistry.chemical_element Condensed Matter Physics Laser law.invention Gas immersion laser doping Adsorption chemistry law Molecule Layer (electronics)
Zdroj:	physica status solidi c. 8:915-918
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201000345
Popis:	We report on the synthesis of SiGe layers on silicon by using a pulsed laser processing technique (Gas Immersion Laser Doping) where GeCl4 gas molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. In-situ real-time measurements of the transient reflectivity of a laser diode reveal that SiGe is formed. Structural characterization of the SiGe layers by X-ray diffraction evidences that pseudomorphic SiGe layers are obtained. Moreover, we demonstrate that Ge concentration saturates at about 16% in the strained layers and that a relaxation process occurs when samples are exposed to 4000 laser pulses or more (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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