Experimental and Numerical Demonstration of Superior RBSOAs in 1.2 kV SiC Trench and SBD-integrated Trench MOSFETs
| Autor: | Shinsuke Harada, Shunki Todaka, Kevin Matsui, Noriyuki Iwamuro, Hiroshi Yano, Ruito Aiba, Masakazu Baba |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Schottky barrier 020208 electrical & electronic engineering chemistry.chemical_element 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences Temperature measurement Safe operating area chemistry.chemical_compound chemistry 0103 physical sciences MOSFET Trench 0202 electrical engineering electronic engineering information engineering Silicon carbide Optoelectronics business |
| Zdroj: | 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | In this study, we investigated the reverse bias safe operating areas (RBSOAs) of three types of state-of-the-art 1.2 kV SiC trench MOSFETs, through experiments and numerical simulations. The experimental results revealed that both SiC trench MOSFETs had significantly larger RBSOAs than a commercial 1.2 kV silicon trench field stop (FS) IGBT. And interestingly, unlike the short-circuit safe operating area (SCSOA), the RBSOA of the Schottky barrier diode-wall integrated trench MOSFET (SWITCH-MOS) was sufficiently large and roughly that of the trench MOSFETs without SBD integration (IE-UMOSFETs). Further, we found that SiC trench MOSFETs with extremely low on-resistance had a very wide RBSOA. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|