Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
| Autor: | Brett Nener, Martin Kocan, Umesh K. Mishra, Lee McCarthy, Giacinta Parish, F. Recht, Ian R. Fletcher, Matt R. Kilburn, Gilberto A. Umana-Membreno |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon business.industry Contact resistance chemistry.chemical_element Heterojunction Gallium nitride High-electron-mobility transistor equipment and supplies Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor Ion implantation chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact |
| Zdroj: | Journal of Electronic Materials. 37:554-557 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non- implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions. |
| Databáze: | OpenAIRE |
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