High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes
| Autor: | Han-Din Liu, Xiaogang Bai, Xiangyi Guo, Dion McIntosh, Joe C. Campbell |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Photocurrent
Materials science APDS business.industry Photoconductivity Condensed Matter Physics Avalanche photodiode Atomic and Molecular Physics and Optics law.invention Responsivity Optics law Ultraviolet light Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Dark current |
| Zdroj: | IEEE Journal of Quantum Electronics. 43:1159-1162 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/jqe.2007.905031 |
| Popis: | We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000, a 100-mum-diameter device exhibits dark current of 5 pA (63 nA/cm2), corresponding to primary multiplied dark current of 5 fA (63 pA/cm2). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda = 280 nm. The excess noise factor corresponds to k = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported. |
| Databáze: | OpenAIRE |
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