Positron annihilation in silicon crystals with mechanically processed surfaces

Autor:	S. A. Vorobiev, K. P. Arefiev, A. S. Karetnikov
Rok vydání:	1975
Předmět:	Materials science Annihilation Photon Silicon Abrasion (mechanical) General Engineering chemistry.chemical_element General Chemistry Positronium chemistry Angular correlation General Materials Science Atomic physics Positron annihilation
Zdroj:	Applied Physics. 8:273-276
ISSN:	1432-0630 0340-3793
DOI:	10.1007/bf00896622
Popis:	The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b95b0ed5d62e3ae7fca5640340f99129 https://doi.org/10.1007/bf00896622 Zobrazit plný text záznamu Full text from SpringerLink