A High Linearity Low Noise Amplifier for 5G Front-End Modules
| Autor: | Muhammad Adil Bashir, Yunqiu Wu, Kai Kang, Chenxi Zhao, Yiming Yu |
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| Rok vydání: | 2019 |
| Předmět: |
Physics
business.industry 020208 electrical & electronic engineering Bandwidth (signal processing) Electrical engineering Linearity 02 engineering and technology Noise figure Inductor Low-noise amplifier 0202 electrical engineering electronic engineering information engineering Return loss Wideband business RC circuit |
| Zdroj: | 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT). |
| Popis: | This paper presents a high linearity wide band low noise amplifier for 5G front-end receiver systems. The proposed LNA has two common source stages cascade in current reused topology. An inductor based wideband inter-stage matching network acts to share the bias current, improve the gain and noise figure performance. Besides a series RC network is connected to second stage gate terminal to improve the stability significantly and reduce the return loss. The design of this LNA is demonstrated in $0.5{\mu}\mathrm{m}$ GaAs pHEMT process. According to post-layout simulation results, a flat gain and noise figure of 16 dB and 1 dB are achieved respectively for a wide bandwidth of 1.5-5.5 GHz. A 3-dB bandwidth of 6.0 GHz, output P 1dB of +20 dBm and output IP3 of +40 dBm are achieved. The LNA chip size along pads is only 0.64 mm2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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