Thin bonded wafer SOI CMOS technology for low voltage high performance applications

Autor:	Chenming Hu, E.D. Nowak, L. Ding, Y.T. Loh
Rok vydání:	2005
Předmět:	Materials science CMOS business.industry Wafer bonding MOSFET Electrical engineering Optoelectronics Silicon on insulator Wafer business Low voltage Threshold voltage Power (physics)
Zdroj:	International Electron Devices and Materials Symposium.
Popis:	Silicon-on-Insulator (SOI) is becoming more attractive for enhancing performance as MOSFET physical dimensions are scaled down. In this work, a 0.5 micron process using bonded SOI material is compared to bulk CMOS. The comparisons include electrical parameters, delay time, and speed power product.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9470d0fbfe2404e86c04e2bd81164cf https://doi.org/10.1109/edms.1994.771270 Zobrazit plný text záznamu