Investigation of the possibility to develop radiation-hardness LSIs for navigational purposes according to the 0.35-μm domestic CMOS SOI technology
| Autor: | G. N. Nazarova, A. A. Titarenko, Yu. A. Kabal’nov, V. V. Elesin, G. V. Chukov |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Cmos soi
Materials science Transistor Silicon on insulator Radio receiver Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Electronic engineering Satellite navigation Electrical and Electronic Engineering Radiation hardening Microwave Noise (radio) |
| Zdroj: | Russian Microelectronics. 41:266-277 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739712040063 |
| Popis: | The results of the computational-experimental investigations of high-frequency and noise properties of SOI MOS transistors and passive elements of 0.35-μm domestic digital CMOS SOI technology are presented. New elements absent in the library composition and necessary to construct the monolithic microwave functional blocks are constructed. The results of design and experimental investigations of the crystals of generating, amplifying, and mixing functional units with operational frequencies of 1.2–1.65 GHz are presented. Based on the results of analysis of the computational-experimental simulation, the possibility in principle to design the monolithic LSI of the radio receiver of satellite navigation based on the domestic CMOS SOI technology with frequencies of 1.2–1.6 GHz and hardness levels up to 1012 unit/s and 106 units is confirmed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink