Schottky-barrier height inhomogeneities controlled by buried Ge/Si quantum dots
| Autor: | F. Meyer, Vinh Le Thanh, Daniel Bouchier, C. Clerc, A. Hattab, V. Aubry-Fortuna, Vy Yam |
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| Rok vydání: | 2002 |
| Předmět: |
Silicon
Condensed matter physics business.industry Chemistry Schottky barrier Schottky diode chemistry.chemical_element Germanium Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor Optics Quantum dot Electrical and Electronic Engineering business Deposition (law) |
| Zdroj: | Microelectronic Engineering. 64:435-441 |
| ISSN: | 0167-9317 |
| Popis: | In this work, we investigated W/p-type Si Schottky contacts with intentional inhomogeneities beneath the interface. These inhomogeneities are related to the presence of Ge-dots located just below the contact. The size and the density of the inhomogeneities can be controlled either through the deposition conditions (Ge-coverage, here) er the thickness of the Si-cap layer. Electrical characterizations of contacts were achieved through current-voltage measurements in a temperature range 100-300 K. These experimental results are compared to numerical simulations using the Atlas-Silvaco package. To describe the contact, we have chosen a cylindrical geometry. The Schottky current takes into account the contributions of small circular patches of lower Schottky barrier height (SBH) embedded in a large area of uniform higher SBH. Our results evidence a correlation between the parameters of the Ge-dots (size, density, distance to the interface) and those of the patches introduced in the model The well-known linear correlation between SBHs and ideality factors, ΦB(n), is observed for all the samples. |
| Databáze: | OpenAIRE |
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