On the diffusion of Al into Si under the influence of laser radiation from a Nd:YAG laser
| Autor: | B Lämmel, D Demireva |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Diffusion Analytical chemistry chemistry.chemical_element Radiation Condensed Matter Physics Laser Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry Si substrate Aluminium law Nd:YAG laser Irradiation Order of magnitude |
| Zdroj: | Journal of Physics D: Applied Physics. 30:1972-1975 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/30/14/003 |
| Popis: | We present the results of measurements of the concentration profiles of Al atoms introduced into p-Si by laser irradiation from a Nd:YaG laser. The radiation treatments were performed with the laser either in the CW or in the Q-switched mode. It was found that limiting concentrations of introduced aluminium atoms in the Si substrate were reached under irradiation in CW operation and that the concentrations measured under irradiation in the Q-switched mode were up to two orders of magnitude higher than those measured for CW operation. For comparison the distribution profiles of Al atoms in a Si substrate for various diffusion coefficients and times of interaction were calculated. |
| Databáze: | OpenAIRE |
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