Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500 – 1600 nm
| Autor: | Nikita A. Pikhtin, M. A. Ladugin, A. A. Marmalyuk, Yu. K. Bobretsova, M. V. Bogdanovich, P. V. Shpak, V. A. Strelets, D. A. Veselov, Sergey O. Slipchenko, N. V. Voronkova |
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| Rok vydání: | 2019 |
| Předmět: |
Ytterbium
Range (particle radiation) Materials science business.industry chemistry.chemical_element Statistical and Nonlinear Physics Laser Q-switching Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Erbium Wavelength Semiconductor chemistry law Attenuation coefficient Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Quantum Electronics. 49:488-492 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qel16956 |
| Popis: | A laser source for bleaching passive Q-switches of erbium-ytterbium lasers is developed and studied. The developed and studied compact pulsed module (peak power exceeding 10 W in a pulse with a duration of 1 μs at a wavelength around 1550 nm) is made on the basis of a semiconductor lasers with an ultra-narrow waveguide integrated with a pulsed pump card. To optimise the output laser characteristics, a series resistance was used in the laser pump circuit. The powers of the free-space and fibre-coupled modules at a temperature of 25 °C are 15 and 12 W, respectively, at a pulse shape close to rectangular. |
| Databáze: | OpenAIRE |
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