Is first compound nucleation at metal–semiconductor interfaces an electronically induced instability?

Autor:	R. M. Walser, K. C. Chen, R. W. Bené, G. S. Lee
Rok vydání:	1980
Předmět:	Materials science Silicon Doping General Engineering Nucleation chemistry.chemical_element Epitaxy Crystallography chemistry Electron diffraction Chemical physics Sputtering Transmission electron microscopy Thin film
Zdroj:	Journal of Vacuum Science and Technology. 17:911-915
ISSN:	0022-5355
DOI:	10.1116/1.570615
Popis:	We present transmission electron microscopy (TED) and transport measurements on thin films of cobalt on (100) and (111) silicon substrates which show that first phase nucleation proceeds upon deposition past a critical thickness and is preceded by a semiconductor/metallic transition in the glassy, as‐deposited phase. We have also performed electron diffraction measurements on thin cobalt films deposited on highly doped Si substrates. It is found that compound nucleation begins upon metal deposition for any thickness down to practical minimum depositions for our sputtering system on the order of 10 A. We interpret these results to indicate that in these systems thin film nucleation is driven by an electronic two‐dimensional instability of the interphase region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9123d5ef47f421a420dcebdc61dc83e https://doi.org/10.1116/1.570615 Zobrazit plný text záznamu