Investigations on Silicon Carbide
| Autor: | H. J. Vink, Knippenberg Wilhelmus F, C. A. A. J. Greebe, H. J. van Daal |
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| Rok vydání: | 1961 |
| Předmět: |
Materials science
Condensed matter physics Scattering Band gap General Physics and Astronomy chemistry.chemical_element Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Acceptor Condensed Matter::Materials Science Effective mass (solid-state physics) chemistry Hall effect Aluminium Electrical resistivity and conductivity |
| Zdroj: | Journal of Applied Physics. 32:2225-2233 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1777048 |
| Popis: | Measurements of Hall effect and resistivity up to 1300°K on p‐type hexagonal SiC showed an acceptor level for aluminium of 0.27 ev at zero donor concentration and a not yet identified acceptor level of 0.39 ev. The spin multiplicity of this unknown center appears to be four times smaller than that of the aluminium center, so that we may conclude that this unknown center in non‐ionized state has paired electrons. Taking a temperature dependence of the level depths proportional to that of the bandgap, the density‐of‐states effective mass of the holes amounts to 0.59 m0. The Hall mobility shows at high temperatures the same temperature dependence as that ascribed to scattering of holes by optical phonons. Assuming that optical phonons really come into effect, the behavior of the Hall mobility in the temperature range from 1300° to 300°K can be explained taking also into account the effect of scattering by acoustical phonons and charged impurities. By a study of I–V characteristics of grown junctions in αSiC ... |
| Databáze: | OpenAIRE |
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