Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance
| Autor: | Stefan E. Schulz, Cameliu Himcinschi, Marion Friedrich, M. Rennau, Dietrich R. T. Zahn, Rudy Caluwaerts, K. Schulze, Quoc Toan Le, Thomas Gessner, S. Frühauf |
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| Rok vydání: | 2005 |
| Předmět: |
Permittivity
Spin coating Materials science Analytical chemistry Low-k dielectric Relative permittivity Chemical vapor deposition Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Plasma-enhanced chemical vapor deposition Ellipsometry Electrical and Electronic Engineering Composite material |
| Zdroj: | Microelectronic Engineering. 82:405-410 |
| ISSN: | 0167-9317 |
| Popis: | The target of our investigation is the evaluation of the effect of decreasing thickness on the relative permittivity of dielectric films for high advanced interconnects of IC's. Two kinds of SiCOH-films with similar chemical composition and thickness between 70 and 830nm were deposited by spin coating (''SOD'') or PECVD (''CVD'') on silicon wafers. The relative permittivity was determined by CV-measurement and its components of polarization response are deduced from ellipsometric and FTIR measurements. |
| Databáze: | OpenAIRE |
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