A common-gate CMOS inverter with n-channel amorphous silicon thin-film transistor formed on a crystalline PMOSFET
| Autor: | Heng-Chih Lin, Wen-Jyh Sah, Si-Chen Lee |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Amorphous silicon
Materials science business.industry Hybrid silicon laser Electrical engineering Nanocrystalline silicon Silicon on insulator Strained silicon Condensed Matter Physics Oxide thin-film transistor Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Thin-film transistor Materials Chemistry Optoelectronics Crystalline silicon Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 35:1709-1712 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(92)90250-g |
| Popis: | A common-gate complementary metal-oxide-semiconductor (CMOS) inverter consisting of an n -channel amorphous silicon (a-Si:H) thin-film transistor on top of 1.2 μm high Al gate of the crystalline silicon p -channel metal-oxide-semiconductor (PMOS) transistor has been achieved successfully. The success of this inverter demonstrates the feasibility of depositing 3500 A thick amorphous silicon material on a surface with roughness in the order of 1.2 μm. It is found that growing an undoped amorphous silicon layer before the deposition of SiN x insulator is necessary to avoid the permanent destruction of the underlying PMOS due to the stress imposed by the SiN x . The vertical integration of crystalline silicon and amorphous silicon devices to form three-dimensional circuits is a promising technique for future applications in high density memory cell and neural network image sensors. |
| Databáze: | OpenAIRE |
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