The Electronic Structure of the '0.15 eV' Cu Acceptor Level in GaAs

Autor:	M. Linnarsson, M. Kleverman, Bo Monemar, Erik Janzén
Rok vydání:	1989
Předmět:	Photoluminescence Materials science Distortion Excited state Binding energy Electronic structure Atomic physics Ground state Acceptor
Zdroj:	MRS Proceedings. 163
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-163-169
Popis:	Cu diffused GaAs samples have been investigated using different kinds of FΠR techniques and photoluminescence. The results suggest that tne “0.15 eV” level originates from the ioruzation of a neutral, nearly substitutional Cu acceptor at a Ga site. Furthermore, the results indicate a distortion in the [100] direction. The ground state binding energy obtained from the effective-mass-like excited states is 157.8 meV at 6K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b8e974cea621cb9ffef928d6c58765e5 https://doi.org/10.1557/proc-163-169 Zobrazit plný text záznamu Full text from SpringerLink