Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation
| Autor: | H. J. Osten, Andrea Fissel, Ayan Roy Chaudhuri |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry Mechanical Engineering Inorganic chemistry Gate dielectric Oxide Heterojunction 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry.chemical_compound chemistry Mechanics of Materials Gate oxide 0103 physical sciences Optoelectronics General Materials Science Thin film 0210 nano-technology business High-κ dielectric |
| Zdroj: | Journal of Materials Research. 32:699-716 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.2017.22 |
| Popis: | Epitaxial layers of insulating binary lanthanide oxides have been considered as potential alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET devices, which was investigated in more detail for epitaxial Gd2O3 and Nd2O3 as model systems. Additionally, the ability to integrate epitaxial dielectric barrier layers into Si structures can usher also in a variety of novel applications involving oxide/silicon/oxide heterostructures in diverse nanoelectronic and quantum-effect devices. Although epitaxial layers of such ionic oxides with excellent structural quality can be grown using molecular beam epitaxy, they often exhibit poor electrical properties such as high leakage current density, flat band instability, poor reliability etc. owing to the presence of electrically active charge defects, generated either during the oxide layer growth or typical subsequent CMOS process steps. Based on the origin and individual character of these defects, we review various aspects of defect prevention and passivation which lead to a significant improvement in the dielectric properties of the heterostructures. |
| Databáze: | OpenAIRE |
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