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Sputtering and plasma assisted/enhanced chemical vapor deposition have been the main stream processing techniques in the semiconductor industry. Due to the scaling of integrated circuits and the consequent increase in aspect ratios of features such as contacts/vias and intra-metal spaces the capabilities of conventional plasma sources are found to be inadequate. In order to increase the ion densities inductive/transformer coupling (ICP/TCP) and electron cyclotron resonance (ECR) have been explored. ICP technology has gained wide spread acceptance due to the relative simplicity of the hardware and significantly improved process capability. This paper reviews some of the recent applications of high density plasma processing in metallization technology. |
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