The Improvement of High-$k$/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
| Autor: | Wen-Kuan Yeh, Fon-Shan Huang, Kwang-Jow Gan, Po-Ying Chen, Chun-Yu Chen, Yu-Ting Chen, Chia-Wei Hsu, Yean-Kuen Fang |
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| Rok vydání: | 2011 |
| Předmět: |
Negative-bias temperature instability
Materials science Silicon business.industry Electrical engineering chemistry.chemical_element Electronic Optical and Magnetic Materials Silicon-germanium Hafnium chemistry.chemical_compound chemistry Stack (abstract data type) MOSFET Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Metal gate High-κ dielectric |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 11:7-12 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2010.2065806 |
| Popis: | The impact of the Si cap/SiGe layer on the Hf-based high-k /metal gate SiGe channel pMOSFET performance and reliability has been investigated. We proposed an optimized strain SiGe channel with a Si cap layer to overcome the Ge diffusion and confine the channel carriers in the strained SiGe layer without the formation of a significant parasitic channel at the interface. With this optimized Si/SiGe stack channel, a high-performance Hf-based high-k/metal gate SiGe pMOSFET can be obtained with an appropriate VTH (~0.3 V), low C -V hysteresis ( |
| Databáze: | OpenAIRE |
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