An in-depth study of the influence of silylation conditions on the silicon contrast
| Autor: | A.M. Goethals, R. Roland, Ria Lombaerts, L. Van den hove |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Silicon
Silylation Kinetics Analytical chemistry chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Chemical engineering Process window Electrical and Electronic Engineering Selectivity Lithography |
| Zdroj: | Microelectronic Engineering. 13:37-40 |
| ISSN: | 0167-9317 |
| Popis: | The final lithographic performance of the Desire process is mainly determined by the selectivity of Si incorporation during the silylation step. The influence of the silylation conditions on both the Si contrast and the silylation kinetics have been studied. The silylation process has been optimized with a response surface analysis. The application of these optimum conditions has resulted in a wide process window. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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