SiO2 Dielectric Film Formation by Alternate Supply of Organic Silicon Gas and Highly Concentrated Ozone Gas at Below 300.DEG.C

Autor:	Shingo Ichimura, Hidehiko Nonaka, Yoshiki Morikawa, Takeshi Noyori, Tetsuya Nishiguchi, Mitsuru Kekura
Rok vydání:	2005
Předmět:	chemistry.chemical_compound Ozone chemistry Silicon Analytical chemistry chemistry.chemical_element Dielectric Electrical and Electronic Engineering Condensed Matter Physics Surfaces Coatings and Films
Zdroj:	Shinku. 48:313-316
ISSN:	1880-9413 0559-8516
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b8d02708e035a129bdaf750b8d662a7e https://doi.org/10.3131/jvsj.48.313 Zobrazit plný text záznamu