Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

Autor: M. Muller, M. Schroter, C. Jungemann, C. Weimer
Rok vydání: 2021
Zdroj: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
DOI: 10.1109/bcicts50416.2021.9682487
Databáze: OpenAIRE