Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing radiation
| Autor: | G. N. Nazarova, V. V. Elesin, N. A. Usachev |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Bicmos technology Electronic Optical and Magnetic Materials Ionizing radiation law.invention Silicon-germanium chemistry.chemical_compound Electric power transmission chemistry law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Electrical and Electronic Engineering Transformer business Microwave |
| Zdroj: | Russian Microelectronics. 39:134-141 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739710020083 |
| Popis: | Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 μm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink