Phase transitions in a two-dimensional system of dipolar excitons in a double-well SiGe/Si heterostructure
| Autor: | V. V. Ushakov, M. A. Akmaev, Nikolai N. Sibeldin, A. V. Novikov, D. N. Lobanov, T. M. Burbaev |
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| Rok vydání: | 2017 |
| Předmět: |
Phase transition
Materials science Photoluminescence Condensed matter physics Exciton General Physics and Astronomy Heterojunction Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences 010305 fluids & plasmas Barrier layer Physics::Space Physics 0103 physical sciences 010306 general physics Spectroscopy Quantum well |
| Zdroj: | Bulletin of the Russian Academy of Sciences: Physics. 81:341-344 |
| ISSN: | 1934-9432 1062-8738 |
| DOI: | 10.3103/s1062873817030054 |
| Popis: | The transition from a dipolar electron–hole liquid (EHL) to a spatially direct one in two-dimensional layers of a type II (buffer Si1–y Ge y )/tSi/sSi1–x Ge x /tSi/(cap Si1–y Ge y ) heterostructure is studied via photoluminescence spectroscopy at helium temperatures and high excitation levels. This transition occurs when the sSi1–xGex barrier layer for electrons (a quantum well (QW) for holes), that separates electron QWs (tSi layers) gets thinner. The basic parameters of both types of EHLs and the lifetime of dipolar excitons are determined. |
| Databáze: | OpenAIRE |
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