A Novel Capacitor-less 1T-DRAM on Partially Depleted SOI pMOSFET based on Direct-tunneling Current in the Partial n+ Poly Gate
| Autor: | Georges Guegan, J. Pretet, G. Molas, P. Touret, C. Raynaud |
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| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials. |
| DOI: | 10.7567/ssdm.2009.p-4-12 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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