Design and Fabrication of 860V SiC Trench MOSFET with Stripe and Rectangular Cells

Autor:	Tongtong Yang, Xianbing Li, Yan Wang, Ruifeng Yue
Rok vydání:	2021
Zdroj:	2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
DOI:	10.1109/icta53157.2021.9661636
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b88b0362838bdc880b30e60625049143 https://doi.org/10.1109/icta53157.2021.9661636 Zobrazit plný text záznamu