Mid-wavelength infrared unipolar nBp superlattice photodetector
| Autor: | Zahra Taghipour, John E. Scheihing, Sanjay Krishna, Ted Schuler-Sandy, Christian P. Morath, Stephen Myers, Vincent M. Cowan, Eli A. Garduno, Alireza Kazemi, Elizabeth H. Steenbergen, Gamini Ariyawansa, Sen Mathews, Seung Hyun Lee |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Infrared business.industry Superlattice Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Wavelength Anti-reflective coating law 0103 physical sciences Optoelectronics Quantum efficiency Zero bias 0210 nano-technology business Dark current |
| Zdroj: | Infrared Physics & Technology. 88:114-118 |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/j.infrared.2017.11.008 |
| Popis: | We report a Mid-Wavelength Infrared (MWIR) barrier photodetector based on the InAs/GaSb/AlSb type-II superlattice (T2SL) material system. The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 µm thick p-doped absorber (InAs/GaSb SL) and an n-type contact layer (InAs/GaSb SL). At 80 K, the device exhibited a 50% cut-off wavelength of 5 µm, was fully turned-ON at zero bias and the measured QE was 50% (front side illumination with no AR coating) at 4.5 µm with a dark current density of 4.7 × 10−6 A/cm2 at Vb = 50 mV. At 150 K and Vb = 50 mV, the 50% cut-off wavelength increased to 5.3 µm, and the QE was 54% at 4.5 µm with a dark current of 5.0 × 10−4 A/cm2. |
| Databáze: | OpenAIRE |
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