| Autor: |
Stefan Müller, Friedhelm Dr. Bauer, Wolfgang Fichtner, H. Dettmer, U. Krumbein, H. Lendenmann, Thomas Stockmeier, K. Lilja |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs. |
| DOI: |
10.1109/ispsd.1993.297107 |
| Popis: |
Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device simulation results show that the inherently faster-switching IGBT is much more affected by dynamic avalanche phenomena than the MCT. It is also shown that the avalanche-injected carriers can be removed by shorting the anode layer, resulting in a much higher turn-off performance for both devices. Because of the lower charge and therefore the higher dV/dt, the ionization rate is higher in the IGBT than in the MCT. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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